Archives

Thin-Film Deposition & Laser Patterning

  • Multi-material thin-film deposition and patterning capabilities for optoelectronic and semiconductor devices
  • Supports Atomic Layer Deposition (ALD), thermal evaporation, and magnetron sputtering for oxide, metal, electrode, and functional thin-film fabrication
  • Precision laser patterning for thin-film structuring, device isolation, and microstructure fabrication
  • Enables rapid process verification, device prototyping, and technology development

Wire Bonding & Multi-Type Packaging

  • Chip-level gold wire bonding (25–50 μm diameter) with bonding strength >5 gf
  • Supports COB, TO (hermeticity ≤1×10⁻⁹ Pa·m³/s), custom metal housings, and thin-film packages (ALD, WVTR <10⁻⁶ g/m²/day)
  • Suitable for optoelectronic devices, MEMS, ICs, high-power devices, and flexible electronics

Hermeticity & Reliability Testing

  • Helium mass spectrometry (sensitivity 10⁻¹² Pa·m³/s) and fluorocarbon backpressure methods for leak detection
  • MIL-STD and JEDEC compliant reliability tests: thermal cycling (-55°C–95°C), high-temp/high-humidity (85°C/85%RH, >1000 h), temperature shock, and high-temp storage (>200°C)
  • Evaluates device lifespan and environmental robustness

Wafer-to-Wafer Bonding

  • Sub-micron alignment and permanent bonding of multi-spec substrates or full wafers
  • Full failure analysis with X-Ray, OBIRCH, SEM (non-destructive) and FIB, Decap, cross-section (destructive) methods
  • Pinpoints failure mechanisms (ESD, material migration, interface fracture) and provides actionable improvements
  • Extended services: film thickness measurement, process verification

Die-to-Wafer Bonding

  • High-precision die placement and robust bonding of individual dies onto host wafers
  • Supports heterogeneous optoelectronic integration with full-scale failure analysis
  • Film thickness and alignment measurement included

Heterogeneous Integrated Chip Fabrication

  • Full-process fabrication of silicon passive structures and III-V active devices: photolithography, ICP etching, oxide/silicon dielectric deposition and patterning, metal electrode patterning/deposition/lift-off
  • Equipment: DUV stepper, ICP etcher, LPCVD/PECVD, ion implantation, e-beam evaporation
  • Key specs: min linewidth 150 nm, overlay ±50 nm; waveguide sidewall verticality 89°, surface roughness 5 nm; active diode average resistance ~5 Ω, single-device output 10 mW