Wire Bonding & Multi-Type Packaging
- Chip-level gold wire bonding (25–50 μm diameter) with bonding strength >5 gf
- Supports COB, TO (hermeticity ≤1×10⁻⁹ Pa·m³/s), custom metal housings, and thin-film packages (ALD, WVTR <10⁻⁶ g/m²/day)
- Suitable for optoelectronic devices, MEMS, ICs, high-power devices, and flexible electronics
